| PART |
Description |
Maker |
| BSP316P |
Low Voltage MOSFETs - Small Signal MOSFET, -100V, SOT-223, RDSon =1.80
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO613SPV |
SIPMOS Small-Signal-Transistor
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SO-8, RDSon = 0.13
|
Infineon Technologies AG
|
| BSP373 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0.3 Ohm, 1.7A, NL
SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSS119 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-23, RDSon=6Ohm, 0.17A, LL
|
Infineon
|
| BSO301 BSO301SP |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8
OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSL207SP |
OptiMOS -P Small-Signal-Transistor
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, TSOP-6
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSO615NV |
Low Voltage MOSFETs - Dual N-Channel SIPMOS Small-Signal Transistor
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSV236SP |
OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363
|
Infineon Technologies AG
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
